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Silicon Part Performance, Efficiency And Stability

Silicon wafer cleaning is the foundation of making photovoltaic cells and integrated circuits, and the effect of cleaning directly affects the ultimate performance, efficiency and stability of photovoltaic cells and integrated circuits. The silicon wafer is cut from the silicon rod, the silicon surface of the multi-layer lattice in the damaged state, covered with unsaturated suspension key, suspension of the high activity, very easy to absorb the external impurity particles, resulting in The wafer surface is contaminated and the performance deteriorates. Where the particulate matter will lead to the decrease of the dielectric strength of the silicon wafer, the metal ion will increase the reverse leakage current of the P-N junction of the photovoltaic cell and reduce the life of the minority. The organic compound will deteriorate the quality of the oxide layer and the H2O will aggravate the corrosion of the silicon surface. Cleaning the silicon chip not only to remove the impurities on the surface of the wafer and to pass the wafer surface passivation, thereby reducing the silicon surface adsorption capacity. High-quality silicon wafer on the surface cleanliness requirements are very strict, theoretically does not allow the existence of any particles, metal ions, organic adhesion, water vapor, oxide, and silicon surface requirements of the atomic level of flatness, silicon edge The suspension key terminates with hydrogen. At present, due to the shortcomings of wafer cleaning technology, large-scale integrated circuit because of the cleanliness of silicon material is not enough to produce problems or even failure ratio of 50%, so optimize the wafer cleaning process is extremely necessary.

Commonly used silicon cleaning technology is wet cleaning and dry cleaning. Wet cleaning with a strong corrosive and oxidizing chemical solvents, such as H2SO4, H2O2, DHF, NH3 ยท H2O and other solvents, silicon surface impurity particles and the chemical reaction of the solvent to produce soluble substances, gas or directly off. In order to improve the removal of impurities, you can use megaphone, heating, vacuum and other technical means, and finally use ultra-pure water to clean the surface of silicon, to meet the requirements of cleanliness requirements of silicon.

Dry cleaning means that the cleaning process does not use chemical solvents, such as gas-phase dry cleaning technology, beam cleaning technology. Gas-phase dry cleaning technology using gasification of HF and silicon surface of the natural oxide layer interaction, can effectively remove the silicon surface oxide and oxide layer of metal particles, and has a certain inhibition of silicon surface oxide film produced effect. Gas dry cleaning greatly reduces the amount of HF and accelerates the efficiency of cleaning.

With the development of photovoltaic cells and semiconductor technology, the requirements for the cleanliness of silicon surface is getting higher and higher, to meet the requirements of micron or even nano-scale, which is the current silicon surface cleaning technology is undoubtedly a huge challenge, Optimization and improvement of wafer cleaning technology is imminent. For the current wet cleaning and dry cleaning technology, can be improved from a number of aspects, in order to achieve the silicon surface cleanliness of the stringent requirements.

(1) wet cleaning for chemical agents have a great dependence, organic matter, oxide, particles, metal ions and other different substances need different nature of the chemical, both to increase the process and increase the cost and the waste will produce Resulting in environmental pollution, simplified wet cleaning process, such as RCA cleaning, through the development of new active agents and chelating agents, to shorten the process to improve the efficiency of removal of impurities.

(2) to reduce the cleaning process on the silicon surface damage is very important, the strong oxidative and corrosive chemicals in the removal of impurities at the same time the silicon surface will cause a certain degree of damage, reducing the performance of silicon and Stability, through the development and improvement of cleaning technology, such as in the two-flow atomization cleaning process, based on the ultrasonic cleaning process, neither damage the surface of the bad silicon chip and improve the removal rate of impurities.

(3) a lot of silicon cleaning process is limited to the laboratory, because the cost is too high can not be a large area of promotion, the need for the original process on the basis of alternative materials and improve the cleaning technology to achieve the miniaturization of cleaning equipment and one-time completion of silicon The film is cleaned to make it possible.

(4) the automation of the cleaning process is the current large-scale factories and enterprises need, automated dry washing process in the country is very lacking, in reducing the cost of dry cleaning at the same time to achieve automatic dry cleaning is the development trend of cleaning technology.

(5) combined cleaning process that is wet cleaning and dry cleaning of the complementary, both to reduce the pollution of wet cleaning and improve cleaning efficiency. I believe that through in-depth and meticulous research, wafer cleaning technology will have a broader prospects.


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