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Silicon Part Strong Corrosive And Oxidizing Property

The commonly used silicon Silicon Part cleaning technology has wet cleaning and dry cleaning process. Wet cleaning with strong corrosive and oxidizing chemical solvents, such as $literal, $literal, DHF, nh3ยท $literal and other solvents, silicon Silicon Part surface impurity particles and solvents produced by chemical reaction to produce soluble matter, gas or directly off. In order to improve the removal effect of impurities, we can use the technical means of mega-sound, heating and vacuum to clean the Silicon Part surface and obtain the requirement of cleanliness.

Dry cleaning means that chemical solvents are not used during cleaning, such as gas phase dry cleaning technology and beam cleaning technology. The gas phase dry cleaning technology uses the Gasification anhydrous HF and the silicon Silicon Part surface's natural oxidation layer interaction, may effectively remove the silicon Silicon Part surface oxide and the oxide layer the metal particle, and has the certain inhibition silicon Silicon Part surface oxide film production the effect. The gas phase dry cleaning greatly reduces the amount of HF and speeds up the cleaning efficiency.

As the basis for making photovoltaic cells and integrated circuits, Silicon Part cleaning is very important, and the effect of cleaning has a direct impact on the ultimate performance, efficiency and stability of photovoltaic cells and integrated circuits. Silicon Silicon Part is cut down from the silicone, the Silicon Part surface of the multi-layer crystal lattice is in the state of destruction, full of unsaturated hanging keys, hanging key activity is higher, very easy to absorb external impurities particles, resulting in the surface of the Silicon Part pollution and poor performance. The particle impurity will lead to the reduction of dielectric strength of silicon Silicon Parts, the metal ions will increase the reverse leakage current of photovoltaic cell N junction and reduce the life span of fewer children, organic compounds will degrade the quality of the oxide layer and $literal the corrosion of the silicon surface. Cleaning silicon Silicon Part not only to remove impurities on the surface of the Silicon Part and to make the Silicon Part surface passivation, thereby reducing the silicon Silicon Part surface adsorption capacity. High-specification silicon Silicon Part on the surface cleanliness requirements are very strict, theoretically do not allow any particles, metal ions, organic adhesion, water vapor, oxidation layer, and the surface of the Silicon Part requires an atomic level of flatness, Silicon Part edge of the suspension key to terminate hydrogen. At present, due to the defects of Silicon Part cleaning technology, because of the insufficient cleanliness of silicon in large-scale integrated circuit, the proportion of the problem or even the failure is 50%, so it is very necessary to optimize the cleaning process of silicon Silicon Part.

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